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- Manufacturer No：IRF9910PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：IRF9910PBF
- SKU：3619486
- Description：Mosfet Array 2 N-Channel (Dual) 20V 10A, 12A 2W Surface Mount 8-SO
User Guide
User Guide
IRF9910PBF Details
Mosfet Array 2 N-Channel (Dual) 20V 10A, 12A 2W Surface Mount 8-SO
IRF9910PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Number of Pins: 8
- Packaging: Tube
- REACH SVHC: No SVHC
- Transistor Element Material: SILICON
- Max Power Dissipation: 2W
- Current Rating: 10A
- Gate to Source Voltage (Vgs): 20V
- Part Status: Discontinued
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Transistor Application: SWITCHING
- Height: 1.5mm
- Turn-Off Delay Time: 15 ns
- Series: HEXFET?
- FET Feature: Logic Level Gate
- Rise Time: 14ns
- Vgs(th) (Max) @ Id: 2.55V @ 250μA
- Drain-source On Resistance-Max: 0.0093Ohm
- Rds On (Max) @ Id, Vgs: 13.4m Ω @ 10A, 10V
- Base Part Number: IRF9910PBF
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Element Configuration: Dual
- Length: 5mm
- Power Dissipation: 2W
- Voltage - Rated DC: 20V
- Drain to Source Breakdown Voltage: 20V
- Published: 2004
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 12A
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 7.5 ns
- Threshold Voltage: 2.55V
- FET Type: 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 10A 12A
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Nominal Vgs: 2.55 V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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