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IRFB33N15D123
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IRFB33N15D
  • Manufacturer No:
    IRFB33N15D
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFB33N15D
  • SKU:
    2686963
  • Description:
    MOSFET N-CH 150V 33A TO-220AB

IRFB33N15D Details

MOSFET N-CH 150V 33A TO-220AB

IRFB33N15D Specification Parameters

  • Surface Mount: NO
  • Mounting Type: Through Hole
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Drain to Source Voltage (Vdss): 150V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code: TO-220AB
  • Vgs (Max): ±30V
  • Drain Current-Max (Abs) (ID): 33A
  • Vgs(th) (Max) @ Id: 5.5V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C: 33A Tc
  • Avalanche Energy Rating (Eas): 330 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Qualification Status: Not Qualified
  • DS Breakdown Voltage-Min: 150V
  • Transistor Element Material: SILICON
  • Published: 2000
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Package / Case: TO-220-3
  • Case Connection: DRAIN
  • JESD-30 Code: R-PSFM-T3
  • Series: HEXFET?
  • Pulsed Drain Current-Max (IDM): 130A
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Drain-source On Resistance-Max: 0.056Ohm
  • Power Dissipation-Max: 3.8W Ta 170W Tc
  • Rds On (Max) @ Id, Vgs: 56m Ω @ 20A, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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