IRFB4227PBFInfineon
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    IRFB4227PBF123
    Inventory:2870
    • Qty Unit Price price
    • 1 $2.687 $2.687
    • 10 $2.66 $26.6
    • 100 $2.633 $263.3
    • 1000 $2.606 $2606
    • 10000 $2.58 $25800

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    IRFB4227PBF
    • Manufacturer No：
      IRFB4227PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFB4227PBF
    • SKU：
      2700871
    • Description：
      MOSFET N-CH 200V 65A TO-220AB

    User Guide

    User Guide

    IRFB4227PBF Details

    MOSFET N-CH 200V 65A TO-220AB

    IRFB4227PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Dual Supply Voltage: 200V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2004
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Vgs (Max): ±30V
    • Series: HEXFET?
    • Continuous Drain Current (ID): 65A
    • Turn-Off Delay Time: 21 ns
    • Resistance: 24mOhm
    • Operating Temperature: -40°C~175°C TJ
    • Fall Time (Typ): 31 ns
    • Pulsed Drain Current-Max (IDM): 260A
    • Power Dissipation-Max: 330W Tc
    • Current - Continuous Drain (Id) @ 25°C: 65A Tc
    • Rds On (Max) @ Id, Vgs: 24m Ω @ 46A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • Number of Channels: 1
    • Radiation Hardening: No
    • Threshold Voltage: 5V
    • Packaging: Tube
    • Number of Pins: 3
    • Drain to Source Breakdown Voltage: 200V
    • Max Junction Temperature (Tj): 175°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Rise Time: 20 ns
    • Recovery Time: 150 ns
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Height: 19.8mm
    • Turn On Delay Time: 33 ns
    • Width: 4.82mm
    • Nominal Vgs: 5 V
    • Power Dissipation: 330W
    • Length: 10.6426mm
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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