IRFB4321PBFInfineon
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    Inventory:1202
    • Qty Unit Price price
    • 1 $534.873 $534.873
    • 10 $529.577 $5295.77
    • 100 $524.333 $52433.3
    • 1000 $519.141 $519141
    • 10000 $514 $5140000

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    IRFB4321PBF
    • Manufacturer No：
      IRFB4321PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFB4321PBF
    • SKU：
      2708231
    • Description：
      MOSFET N-CH 150V 83A TO-220AB

    User Guide

    User Guide

    IRFB4321PBF Details

    MOSFET N-CH 150V 83A TO-220AB

    IRFB4321PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Voltage - Rated DC: 150V
    • Dual Supply Voltage: 150V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Turn-Off Delay Time: 25 ns
    • Vgs (Max): ±30V
    • Drain Current-Max (Abs) (ID): 75A
    • Turn On Delay Time: 18 ns
    • Height: 9.02mm
    • Nominal Vgs: 5 V
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Current Rating: 83A
    • Length: 10.6426mm
    • Rds On (Max) @ Id, Vgs: 15m Ω @ 33A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Threshold Voltage: 5V
    • Packaging: Tube
    • Number of Pins: 3
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Drain to Source Breakdown Voltage: 150V
    • Published: 2008
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Power Dissipation: 330mW
    • Fall Time (Typ): 35 ns
    • Rise Time: 60 ns
    • Series: HEXFET?
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Width: 4.82mm
    • Recovery Time: 130 ns
    • Continuous Drain Current (ID): 83A
    • Current - Continuous Drain (Id) @ 25°C: 85A Tc
    • Power Dissipation-Max: 350W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 50V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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