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- Manufacturer No：IRFH5010TR2PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFH5010TR2PBF
- SKU：12312955
- Description：MOSFET N-CH 100V 13A 5X6 PQFN
User Guide
User Guide
IRFH5010TR2PBF Details
MOSFET N-CH 100V 13A 5X6 PQFN
IRFH5010TR2PBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- RoHS Status: RoHS Compliant
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Continuous Drain Current (ID): 100A
- Power Dissipation: 250W
- Turn On Delay Time: 9 ns
- Drain to Source Resistance: 9mOhm
- Package / Case: 8-PowerVDFN
- Max Power Dissipation: 3.6W
- Fall Time (Typ): 8.6 ns
- Supplier Device Package: 8-PQFN (5x6)
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
- Current - Continuous Drain (Id) @ 25°C: 13A Ta 100A Tc
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Part Status: Obsolete
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 100V
- Published: 2010
- Width: 5mm
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Height: 838.2μm
- Length: 5.9944mm
- Series: HEXFET?
- Rise Time: 12ns
- Turn-Off Delay Time: 27 ns
- Nominal Vgs: 4 V
- Recovery Time: 51 ns
- Vgs(th) (Max) @ Id: 4V @ 150μA
- Rds On Max: 9 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
- Input Capacitance: 4.34nF
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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