IRFH7110TRPBFInfineon
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    IRFH7110TRPBF123
    • Manufacturer No：
      IRFH7110TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      2710889
    • Description：
      N-Channel 100 V 11A (Ta), 58A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
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    IRFH7110TRPBF
    • Manufacturer No：
      IRFH7110TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFH7110TRPBF
    • SKU：
      2710889
    • Description：
      N-Channel 100 V 11A (Ta), 58A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

    User Guide

    User Guide

    IRFH7110TRPBF Details

    N-Channel 100 V 11A (Ta), 58A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

    IRFH7110TRPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Terminal Position: DUAL
    • REACH SVHC: No SVHC
    • Drain to Source Voltage (Vdss): 100V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Width: 5mm
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Continuous Drain Current (ID): 11A
    • JESD-30 Code: R-PDSO-F5
    • Fall Time (Typ): 18 ns
    • Nominal Vgs: 3 V
    • Pulsed Drain Current-Max (IDM): 240A
    • Length: 5.85mm
    • Vgs(th) (Max) @ Id: 4V @ 100μA
    • Package / Case: 8-TQFN Exposed Pad
    • Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
    • Rds On (Max) @ Id, Vgs: 13.5m Ω @ 35A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Number of Pins: 8
    • Published: 2013
    • Number of Terminations: 5
    • Threshold Voltage: 3V
    • Transistor Element Material: SILICON
    • Factory Lead Time: 15 Weeks
    • Gate to Source Voltage (Vgs): 20V
    • Terminal Form: FLAT
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Drain Current-Max (Abs) (ID): 50A
    • Subcategory: FET General Purpose Power
    • Series: HEXFET?
    • Turn On Delay Time: 11 ns
    • Turn-Off Delay Time: 22 ns
    • Rise Time: 23 ns
    • Power Dissipation: 3.6W
    • Height: 1.17mm
    • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
    • Power Dissipation-Max: 3.6W Ta 104W Tc
    • Current - Continuous Drain (Id) @ 25°C: 11A Ta 58A Tc
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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