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IRFI4019HG-117P123
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IRFI4019HG-117P
  • Manufacturer No:
    IRFI4019HG-117P
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    IRFI4019HG-117P
  • SKU:
    2681839
  • Description:
    MOSFET 2N-CH 150V 8.7A TO-220FP

IRFI4019HG-117P Details

MOSFET 2N-CH 150V 8.7A TO-220FP

IRFI4019HG-117P Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • RoHS Status: RoHS Compliant
  • Radiation Hardening: No
  • Packaging: Tube
  • Number of Pins: 5
  • Drain to Source Breakdown Voltage: 150V
  • Published: 2009
  • FET Feature: Standard
  • Gate to Source Voltage (Vgs): 20V
  • Case Connection: ISOLATED
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 7 ns
  • Max Power Dissipation: 18W
  • FET Type: 2 N-Channel (Dual)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Fall Time (Typ): 3.1 ns
  • Rise Time: 6.6ns
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
  • Rds On (Max) @ Id, Vgs: 95m Ω @ 5.2A, 10V
  • Number of Elements: 2
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Number of Terminations: 5
  • Drain to Source Voltage (Vdss): 150V
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Additional Feature: HIGH RELIABILITY
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Turn-Off Delay Time: 13 ns
  • Power Dissipation: 18W
  • Pulsed Drain Current-Max (IDM): 34A
  • Continuous Drain Current (ID): 8.7A
  • Package / Case: TO-220-5 Full Pack (Formed Leads)
  • Avalanche Energy Rating (Eas): 77 mJ
  • Vgs(th) (Max) @ Id: 4.9V @ 50μA

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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