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- Manufacturer No：IRFL024ZPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFL024ZPBF
- SKU：2685501
- Description：MOSFET N-CH 55V 5.1A SOT223
User Guide
User Guide
IRFL024ZPBF Details
MOSFET N-CH 55V 5.1A SOT223
IRFL024ZPBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 4
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Published: 1999
- Vgs (Max): ±20V
- DS Breakdown Voltage-Min: 55V
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-261-4, TO-261AA
- Power Dissipation-Max: 1W Ta
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 5.1A Ta
- Drain-source On Resistance-Max: 0.0575Ohm
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Surface Mount: YES
- Terminal Position: DUAL
- Packaging: Tube
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Part Status: Discontinued
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Voltage (Vdss): 55V
- Configuration: SINGLE WITH BUILT-IN DIODE
- JESD-30 Code: R-PDSO-G4
- Series: HEXFET?
- Drain Current-Max (Abs) (ID): 5.1A
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Rds On (Max) @ Id, Vgs: 57.5m Ω @ 3.1A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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