IRFPS3810PBFInfineon
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    IRFPS3810PBF
    • Manufacturer No：
      IRFPS3810PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFPS3810PBF
    • SKU：
      2690532
    • Description：
      MOSFET N-CH 100V 170A SUPER247

    User Guide

    User Guide

    IRFPS3810PBF Details

    MOSFET N-CH 100V 170A SUPER247

    IRFPS3810PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Packaging: Bulk
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 100V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Part Status: Not For New Designs
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Width: 5.3mm
    • Subcategory: FET General Purpose Power
    • Series: HEXFET?
    • Resistance: 9Ohm
    • Turn On Delay Time: 24 ns
    • Fall Time (Typ): 140 ns
    • Lead Free: Contains Lead, Lead Free
    • Continuous Drain Current (ID): 170A
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Length: 16.0782mm
    • Current - Continuous Drain (Id) @ 25°C: 170A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
    • Power Dissipation: 441W
    • Rds On (Max) @ Id, Vgs: 9m Ω @ 100A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Published: 2002
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Factory Lead Time: 25 Weeks
    • Case Connection: DRAIN
    • Vgs (Max): ±30V
    • Turn-Off Delay Time: 45 ns
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Height: 20.8mm
    • Nominal Vgs: 5 V
    • Current Rating: 170A
    • Rise Time: 270 ns
    • Recovery Time: 330 ns
    • Package / Case: TO-274AA
    • Pulsed Drain Current-Max (IDM): 670A
    • Power Dissipation-Max: 580W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 6790pF @ 25V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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