IRFR13N15DTRPBFInfineon
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    IRFR13N15DTRPBF
    • Manufacturer No：
      IRFR13N15DTRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFR13N15DTRPBF
    • SKU：
      2682817
    • Description：
      N-Channel 150 V 14A (Tc) 86W (Tc) Surface Mount D-Pak

    User Guide

    User Guide

    IRFR13N15DTRPBF Details

    N-Channel 150 V 14A (Tc) 86W (Tc) Surface Mount D-Pak

    IRFR13N15DTRPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Voltage - Rated DC: 150V
    • Dual Supply Voltage: 150V
    • Factory Lead Time: 14 Weeks
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Part Status: Not For New Designs
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Turn-Off Delay Time: 12 ns
    • Current Rating: 14A
    • Series: HEXFET?
    • Fall Time (Typ): 11 ns
    • JEDEC-95 Code: TO-252AA
    • Height: 2.3876mm
    • Pulsed Drain Current-Max (IDM): 56A
    • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
    • Nominal Vgs: 5.5 V
    • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
    • Rds On (Max) @ Id, Vgs: 180m Ω @ 8.3A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Drain to Source Breakdown Voltage: 150V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Threshold Voltage: 5.5V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Published: 2004
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Vgs (Max): ±30V
    • Turn On Delay Time: 8 ns
    • Continuous Drain Current (ID): 14A
    • Width: 6.22mm
    • Resistance: 180mOhm
    • Rise Time: 26 ns
    • Length: 6.7056mm
    • Current - Continuous Drain (Id) @ 25°C: 14A Tc
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Power Dissipation: 86W
    • Power Dissipation-Max: 86W Tc
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    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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