IRFR3410TRLPBFInfineon
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    Inventory:11873
    • Qty Unit Price price
    • 1 $192.968 $192.968
    • 10 $191.057 $1910.57
    • 100 $189.165 $18916.5
    • 1000 $187.292 $187292
    • 10000 $185.437 $1854370

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    IRFR3410TRLPBF
    • Manufacturer No：
      IRFR3410TRLPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFR3410TRLPBF
    • SKU：
      2682141
    • Description：
      MOSFET N-CH 100V 31A DPAK

    User Guide

    User Guide

    IRFR3410TRLPBF Details

    MOSFET N-CH 100V 31A DPAK

    IRFR3410TRLPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Surface Mount: YES
    • Factory Lead Time: 12 Weeks
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • DS Breakdown Voltage-Min: 100V
    • Reach Compliance Code: not_compliant
    • Transistor Element Material: SILICON
    • Published: 2004
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Series: HEXFET?
    • JEDEC-95 Code: TO-252AA
    • Drain-source On Resistance-Max: 0.039Ohm
    • Avalanche Energy Rating (Eas): 140 mJ
    • Power Dissipation-Max: 3W Ta 110W Tc
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Voltage (Vdss): 100V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • FET Type: N-Channel
    • Drain Current-Max (Abs) (ID): 30A
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Pulsed Drain Current-Max (IDM): 125A
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 31A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
    • Rds On (Max) @ Id, Vgs: 39m Ω @ 18A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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