Add to like
Add to project list
IRFR4104TRL123
  • Manufacturer No:
    IRFR4104TRL
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2679612
  • Description:
    HEXFET® Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 42A Tc 42A 140W Tc 40V
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

IRFR4104TRL
  • Manufacturer No:
    IRFR4104TRL
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR4104TRL
  • SKU:
    2679612
  • Description:
    HEXFET® Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 42A Tc 42A 140W Tc 40V

IRFR4104TRL Details

HEXFET® Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 42A Tc 42A 140W Tc 40V

IRFR4104TRL Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • JESD-609 Code: e3
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • DS Breakdown Voltage-Min: 40V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Series: HEXFET?
  • JEDEC-95 Code: TO-252AA
  • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Current - Continuous Drain (Id) @ 25°C: 42A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
  • Avalanche Energy Rating (Eas): 145 mJ
  • Number of Terminations: 2
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Part Status: Obsolete
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Reach Compliance Code: not_compliant
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 40V
  • Published: 2003
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Drain Current-Max (Abs) (ID): 42A
  • Pulsed Drain Current-Max (IDM): 480A
  • Power Dissipation-Max: 140W Tc
  • Drain-source On Resistance-Max: 0.0055Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Rds On (Max) @ Id, Vgs: 5.5m Ω @ 42A, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via