IRG4BC20FPBFInfineon
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    IRG4BC20FPBF123
    • Manufacturer No：
      IRG4BC20FPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
    • SKU：
      2687702
    • Description：
      IGBT - 600 V 16 A 60 W Through Hole TO-220AB
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    IRG4BC20FPBF
    • Manufacturer No：
      IRG4BC20FPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IRG4BC20FPBF
    • SKU：
      2687702
    • Description：
      IGBT - 600 V 16 A 60 W Through Hole TO-220AB

    User Guide

    User Guide

    IRG4BC20FPBF Details

    IGBT - 600 V 16 A 60 W Through Hole TO-220AB

    IRG4BC20FPBF Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Element Configuration: Dual
    • Input Type: Standard
    • Collector Emitter Breakdown Voltage: 600V
    • Gate-Emitter Voltage-Max: 20V
    • Collector Emitter Voltage (VCEO): 2V
    • Published: 1997
    • Max Collector Current: 16A
    • JEDEC-95 Code: TO-220AB
    • Height: 15.24mm
    • Power Dissipation: 60W
    • Transistor Application: POWER CONTROL
    • Rise Time: 17 ns
    • Lead Free: Contains Lead, Lead Free
    • Current - Collector Pulsed (Icm): 64A
    • Additional Feature: FAST SWITCHING
    • Length: 10.5156mm
    • Gate Charge: 27nC
    • Test Condition: 480V, 9A, 50 Ω, 15V
    • Td (on/off) @ 25°C: 24ns/190ns
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • RoHS Status: RoHS Compliant
    • Radiation Hardening: No
    • Packaging: Tube
    • Number of Pins: 3
    • Factory Lead Time: 16 Weeks
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 600V
    • Terminal Position: SINGLE
    • Gate-Emitter Thr Voltage-Max: 6V
    • Operating Temperature: -55°C~150°C TJ
    • Current Rating: 16A
    • Package / Case: TO-220-3
    • Polarity/Channel Type: N-CHANNEL
    • Max Power Dissipation: 60W
    • Case Connection: COLLECTOR
    • Subcategory: Insulated Gate BIP Transistors
    • Turn On Delay Time: 24 ns
    • Turn-Off Delay Time: 190 ns
    • Turn On Time: 41 ns
    • Width: 4.69mm
    • Collector Emitter Saturation Voltage: 1.66V
    • Turn Off Time-Nom (toff): 640 ns
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
    • Switching Energy: 70μJ (on), 600μJ (off)
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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