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IRL1104
  • Manufacturer No:
    IRL1104
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRL1104
  • SKU:
    2720402
  • Description:
    MOSFET N-CH 40V 104A TO-220AB

IRL1104 Details

MOSFET N-CH 40V 104A TO-220AB

IRL1104 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Part Status: Obsolete
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 40V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Published: 1999
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Series: HEXFET?
  • Vgs (Max): ±16V
  • Drain-source On Resistance-Max: 0.008Ohm
  • Power Dissipation-Max: 167W Tc
  • Current - Continuous Drain (Id) @ 25°C: 104A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
  • Pulsed Drain Current-Max (IDM): 416A
  • Number of Terminations: 2
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • JESD-609 Code: e3
  • Packaging: Tube
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 30
  • Terminal Position: SINGLE
  • DS Breakdown Voltage-Min: 40V
  • Technology: MOSFET (Metal Oxide)
  • Terminal Finish: MATTE TIN OVER NICKEL
  • Operating Temperature: -55°C~175°C TJ
  • Package / Case: TO-220-3
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Additional Feature: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Drain Current-Max (Abs) (ID): 104A
  • Avalanche Energy Rating (Eas): 340 mJ
  • Rds On (Max) @ Id, Vgs: 8m Ω @ 62A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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