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- Manufacturer No：IRL1104STRLPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRL1104STRLPBF
- SKU：2709723
- Description：MOSFET N-CH 40V 104A D2PAK
User Guide
User Guide
IRL1104STRLPBF Details
MOSFET N-CH 40V 104A D2PAK
IRL1104STRLPBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Max Operating Temperature: 175°C
- Gate to Source Voltage (Vgs): 16V
- Drain to Source Voltage (Vdss): 40V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Drain to Source Resistance: 8mOhm
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Supplier Device Package: D2PAK
- Fall Time (Typ): 64 ns
- Power Dissipation: 167W
- Current - Continuous Drain (Id) @ 25°C: 104A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
- Input Capacitance: 3.445nF
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Element Configuration: Single
- Published: 2004
- Drain to Source Breakdown Voltage: 40V
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series: HEXFET?
- Turn On Delay Time: 18 ns
- Turn-Off Delay Time: 32 ns
- Vgs (Max): ±16V
- Continuous Drain Current (ID): 104A
- Rds On Max: 8 mΩ
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
- Power Dissipation-Max: 2.4W Ta 167W Tc
- Rise Time: 257ns
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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