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- Manufacturer No：IRL2203NSTRLPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRL2203NSTRLPBF
- SKU：6446669
- Description：N-Channel 30 V 116A (Tc) 3.8W (Ta), 180W (Tc) Surface Mount D2PAK
User Guide
User Guide
IRL2203NSTRLPBF Details
N-Channel 30 V 116A (Tc) 3.8W (Ta), 180W (Tc) Surface Mount D2PAK
IRL2203NSTRLPBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
- Threshold Voltage: 3V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 16V
- Drain to Source Breakdown Voltage: 30V
- Part Status: Not For New Designs
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Pulsed Drain Current-Max (IDM): 400A
- Series: HEXFET?
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Nominal Vgs: 3 V
- Turn-Off Delay Time: 23 ns
- Length: 10.668mm
- Lead Free: Contains Lead, Lead Free
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Continuous Drain Current (ID): 116A
- Recovery Time: 84 ns
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 116A Tc
- Power Dissipation-Max: 3.8W Ta 180W Tc
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2010
- Element Configuration: Single
- Voltage - Rated DC: 30V
- Dual Supply Voltage: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Height: 4.572mm
- Drain Current-Max (Abs) (ID): 75A
- Width: 9.65mm
- Turn On Delay Time: 11 ns
- Resistance: 7mOhm
- Vgs (Max): ±16V
- Rise Time: 160 ns
- Power Dissipation: 170W
- Fall Time (Typ): 66 ns
- Current Rating: 116A
- Avalanche Energy Rating (Eas): 290 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
- Rds On (Max) @ Id, Vgs: 7m Ω @ 60A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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