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- Manufacturer No：IRL3102SPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRL3102SPBF
- SKU：2733975
- Description：MOSFET N-CH 20V 61A D2PAK
User Guide
User Guide
IRL3102SPBF Details
MOSFET N-CH 20V 61A D2PAK
IRL3102SPBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- RoHS Status: RoHS Compliant
- Min Operating Temperature: -55°C
- Packaging: Tube
- REACH SVHC: No SVHC
- Gate to Source Voltage (Vgs): 10V
- Voltage - Rated DC: 20V
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time: 80 ns
- Supplier Device Package: D2PAK
- Current Rating: 61A
- Rise Time: 130ns
- Power Dissipation: 89W
- Power Dissipation-Max: 89W Tc
- Rds On Max: 13 mΩ
- Nominal Vgs: 700 mV
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
- Mounting Type: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 20V
- Published: 2004
- FET Type: N-Channel
- Drain to Source Resistance: 15mOhm
- Series: HEXFET?
- Fall Time (Typ): 110 ns
- Vgs (Max): ±10V
- Continuous Drain Current (ID): 61A
- Vgs(th) (Max) @ Id: 700mV @ 250μA
- Input Capacitance: 2.5nF
- Current - Continuous Drain (Id) @ 25°C: 61A Tc
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 7V
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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