IRL3713PBFInfineon
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    IRL3713PBF
    • Manufacturer No：
      IRL3713PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRL3713PBF
    • SKU：
      6445892
    • Description：
      N-Channel 30 V 260A (Tc) 330W (Tc) Through Hole TO-220AB

    User Guide

    User Guide

    IRL3713PBF Details

    N-Channel 30 V 260A (Tc) 330W (Tc) Through Hole TO-220AB

    IRL3713PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Factory Lead Time: 14 Weeks
    • Element Configuration: Single
    • Voltage - Rated DC: 30V
    • Dual Supply Voltage: 30V
    • Published: 2003
    • Power Dissipation: 200W
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn-Off Delay Time: 40 ns
    • Series: HEXFET?
    • Resistance: 3mOhm
    • Turn On Delay Time: 16 ns
    • Nominal Vgs: 2.5 V
    • Height: 9.017mm
    • Fall Time (Typ): 57 ns
    • Power Dissipation-Max: 330W Tc
    • Current - Continuous Drain (Id) @ 25°C: 260A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 15V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Packaging: Tube
    • Number of Pins: 3
    • Threshold Voltage: 2.5V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 30V
    • Part Status: Not For New Designs
    • FET Type: N-Channel
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Current Rating: 250A
    • Drain Current-Max (Abs) (ID): 75A
    • Additional Feature: AVALANCHE RATED
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Width: 4.82mm
    • Rise Time: 160 ns
    • Continuous Drain Current (ID): 260A
    • Length: 10.6426mm
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 3m Ω @ 38A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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