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IRLL2703TRPBF123
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IRLL2703TRPBF
  • Manufacturer No:
    IRLL2703TRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRLL2703TRPBF
  • SKU:
    2718884
  • Description:
    N-Channel 30 V 3.9A (Ta) 1W (Ta) Surface Mount SOT-223

IRLL2703TRPBF Details

N-Channel 30 V 3.9A (Ta) 1W (Ta) Surface Mount SOT-223

IRLL2703TRPBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Terminations: 4
  • Lead Free: Contains Lead
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 16V
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • JESD-30 Code: R-PDSO-G4
  • Series: HEXFET?
  • Resistance: 60mOhm
  • Continuous Drain Current (ID): 3.9A
  • Rise Time: 24 ns
  • Power Dissipation: 2.1W
  • Turn-Off Delay Time: 6.9 ns
  • Vgs(th) (Max) @ Id: 2.4V @ 250μA
  • Avalanche Energy Rating (Eas): 180 mJ
  • Length: 6.6802mm
  • Current - Continuous Drain (Id) @ 25°C: 3.9A Ta
  • Rds On (Max) @ Id, Vgs: 45m Ω @ 3.9A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Factory Lead Time: 14 Weeks
  • Element Configuration: Single
  • Voltage - Rated DC: 30V
  • Part Status: Not For New Designs
  • Forward Voltage: 1V
  • Technology: MOSFET (Metal Oxide)
  • Published: 1999
  • Pulsed Drain Current-Max (IDM): 16A
  • Height: 1.4478mm
  • Width: 3.7mm
  • Package / Case: TO-261-4, TO-261AA
  • Current Rating: 3.9A
  • Fall Time (Typ): 14 ns
  • Vgs (Max): ±16V
  • Drive Voltage (Max Rds On,Min Rds On): 4V 10V
  • Power Dissipation-Max: 1W Ta
  • Turn On Delay Time: 7.4 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Additional Feature: HIGH RELIABILITY, AVALANCHE RATED

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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