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- Manufacturer No：IRS21851SPBF
- Manufacturer：Infineon
- Category：PMIC - Gate Drivers
- Datasheet：IRS21851SPBF
- SKU：2730280
- Description：Tube IRS21851SPBF High-Side 1996 gate driver 40ns -55C~150C TJ 4A 4A 1.25W
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User Guide
IRS21851SPBF Details
Tube IRS21851SPBF High-Side 1996 gate driver 40ns -55C~150C TJ 4A 4A 1.25W
IRS21851SPBF Specification Parameters
- Mounting Type: Surface Mount
- Number of Functions: 1
- RoHS Status: RoHS Compliant
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 8
- Packaging: Tube
- Termination: SMD/SMT
- REACH SVHC: No SVHC
- Supply Voltage: 15V
- Width: 4mm
- Operating Temperature: -55°C~150°C TJ
- Max Output Current: 4A
- Output Peak Current Limit-Nom: 4A
- Published: 1996
- Power Dissipation: 1.25W
- Height: 1.4986mm
- Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Driven Configuration: High-Side
- Release Time: 160 ns
- Nominal Supply Current: 240μA
- Current - Peak Output (Source, Sink): 4A 4A
- Propagation Delay: 210 ns
- Logic Voltage - VIL, VIH: 0.8V 2.5V
- Rise / Fall Time (Typ): 15ns 15ns
- Mount: Surface Mount
- Number of Drivers: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Pins: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Technology: CMOS
- Channel Type: Single
- High Side Voltage - Max (Bootstrap): 600V
- Moisture Sensitivity Level (MSL): 2 (1 Year)
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Output Current: 4A
- Input Type: Non-Inverting
- Max Power Dissipation: 1.25W
- Fall Time (Typ): 40 ns
- Gate Type: IGBT, N-Channel MOSFET
- Rise Time: 40ns
- Voltage - Supply: 10V~20V
- Output Voltage: 620V
- Max Supply Current: 240μA
- Length: 4.9784mm
- Turn On Delay Time: 210 ns
- Built-in Protections: TRANSIENT; UNDER VOLTAGE
- Base Part Number: IRS21851SPBF
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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