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- Manufacturer No：MMBTA14LT1HTSA1
- Manufacturer：Infineon
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：MMBTA14LT1HTSA1
- SKU：2734622
- Description：Bipolar (BJT) Transistor NPN - Darlington 30 V 300 mA 125MHz 330 mW Surface Mount SOT-23-3
User Guide
User Guide
MMBTA14LT1HTSA1 Details
Bipolar (BJT) Transistor NPN - Darlington 30 V 300 mA 125MHz 330 mW Surface Mount SOT-23-3
MMBTA14LT1HTSA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Lead Free: Lead Free
- Min Operating Temperature: -65°C
- Published: 2007
- Element Configuration: Single
- Collector Emitter Breakdown Voltage: 30V
- Collector Emitter Voltage (VCEO): 30V
- Max Breakdown Voltage: 30V
- Current Rating: 300mA
- Current - Collector (Ic) (Max): 300mA
- Polarity: NPN
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Operating Temperature: 150°C TJ
- Power - Max: 330mW
- Supplier Device Package: SOT-23-3
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100μA, 100mA
- Base Part Number: MMBTA
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Emitter Base Voltage (VEBO): 10V
- Voltage - Rated DC: 30V
- Voltage - Collector Emitter Breakdown (Max): 30V
- Collector Base Voltage (VCBO): 30V
- Part Status: Not For New Designs
- Max Collector Current: 300mA
- Collector Emitter Saturation Voltage: 1.5V
- Factory Lead Time: 26 Weeks
- Frequency - Transition: 125MHz
- Max Power Dissipation: 330mW
- Current - Collector Cutoff (Max): 100nA ICBO
- Transistor Type: NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA 5V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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