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SPB80P06PGATMA1123
  • Manufacturer No:
    SPB80P06PGATMA1
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2734555
  • Description:
    On a Reel of 1000, P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
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Inventory:2992
  • Qty Unit Price price
  • 1 $722.182 $722.182
  • 10 $715.031 $7150.31
  • 100 $707.951 $70795.1
  • 1000 $700.941 $700941
  • 10000 $694 $6940000

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SPB80P06PGATMA1
  • Manufacturer No:
    SPB80P06PGATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SPB80P06PGATMA1
  • SKU:
    2734555
  • Description:
    On a Reel of 1000, P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1

SPB80P06PGATMA1 Details

On a Reel of 1000, P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1

SPB80P06PGATMA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Pins: 3
  • Lead Free: Contains Lead
  • Terminal Form: GULL WING
  • Factory Lead Time: 13 Weeks
  • Max Junction Temperature (Tj): 175°C
  • Terminal Finish: Tin (Sn)
  • Terminal Position: SINGLE
  • Technology: MOSFET (Metal Oxide)
  • Published: 1999
  • Halogen Free: Halogen Free
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Fall Time (Typ): 30 ns
  • Rise Time: 18 ns
  • Threshold Voltage: -3V
  • Drain to Source Breakdown Voltage: -60V
  • Current - Continuous Drain (Id) @ 25°C: 80A Tc
  • Series: SIPMOS?
  • Power Dissipation-Max: 340W Tc
  • Current Rating: -80A
  • Vgs(th) (Max) @ Id: 4V @ 5.5mA
  • Rds On (Max) @ Id, Vgs: 23m Ω @ 64A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Pin Count: 4
  • Pbfree Code: no
  • Qualification Status: Not Qualified
  • Drain to Source Voltage (Vdss): 60V
  • Reach Compliance Code: not_compliant
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Height: 4.4mm
  • Operating Temperature: -55°C~175°C TJ
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • FET Type: P-Channel
  • Additional Feature: AVALANCHE RATED
  • Turn On Delay Time: 24 ns
  • Voltage - Rated DC: -60V
  • Max Dual Supply Voltage: -60V
  • Turn-Off Delay Time: 56 ns
  • Power Dissipation: 340W
  • Continuous Drain Current (ID): -80A
  • Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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