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71124S12YG8123
  • Manufacturer No:
    71124S12YG8
  • Manufacturer:
    Integrated Device Technology Inc
  • Category:
    Memory
  • Datasheet:
  • SKU:
    11049417
  • Description:
    PARALLEL J BEND 3-STATE STANDARD SRAM (Memory Format) Memory 70C 4.5V 1048576bit 0.01A
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71124S12YG8
  • Manufacturer No:
    71124S12YG8
  • Manufacturer:
    Integrated Device Technology Inc
  • Category:
    Memory
  • Datasheet:
    71124S12YG8
  • SKU:
    11049417
  • Description:
    PARALLEL J BEND 3-STATE STANDARD SRAM (Memory Format) Memory 70C 4.5V 1048576bit 0.01A

71124S12YG8 Details

PARALLEL J BEND 3-STATE STANDARD SRAM (Memory Format) Memory 70C 4.5V 1048576bit 0.01A

71124S12YG8 Specification Parameters

  • Number of Functions: 1
  • Surface Mount: YES
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Power Supplies: 5V
  • Temperature Grade: COMMERCIAL
  • Technology: CMOS
  • Operating Temperature (Max): 70°C
  • Terminal Pitch: 1.27mm
  • Number of Terminals: 32
  • Supply Voltage-Min (Vsup): 4.5V
  • Terminal Form: J BEND
  • Terminal Finish: Matte Tin (Sn) - annealed
  • I/O Type: COMMON
  • Operating Mode: ASYNCHRONOUS
  • Access Time (Max): 12 ns
  • HTS Code: 8542.32.00.41
  • Standby Current-Max: 0.01A
  • Memory IC Type: STANDARD SRAM
  • Height Seated (Max): 3.683mm
  • Supply Current-Max: 0.16mA
  • RoHS Status: RoHS Compliant
  • JESD-609 Code: e3
  • Memory Width: 8
  • Supply Voltage: 5V
  • Moisture Sensitivity Level (MSL): 3
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Supply Voltage-Max (Vsup): 5.5V
  • Pin Count: 32
  • Reach Compliance Code: compliant
  • Standby Voltage-Min: 4.5V
  • Output Characteristics: 3-STATE
  • Width: 10.16mm
  • Parallel/Serial: PARALLEL
  • Subcategory: SRAMs
  • Pbfree Code: icon-pbfree yes
  • ECCN Code: 3A991.B.2.A
  • Memory Density: 1048576 bit
  • Organization: 128KX8
  • Length: 20.955mm
  • JESD-30 Code: R-PDSO-J32

Excellent

Based on reviews

Excellent

Based on reviews

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