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- Manufacturer No：2N4033
- Manufacturer：MICROSS/On Semiconductor
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：2N4033
- SKU：8837759
- Description：TO-39 Through Hole 1 PNP Bipolar (BJT) Transistor 1A 800mW 80V 200C
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User Guide
2N4033 Details
TO-39 Through Hole 1 PNP Bipolar (BJT) Transistor 1A 800mW 80V 200C
2N4033 Specification Parameters
- Part Status: Active
- Number of Elements: 1
- Radiation Hardening: No
- Emitter Base Voltage (VEBO): 5V
- Factory Lead Time: 4 Weeks
- Max Collector Current: 1A
- Collector Emitter Voltage (VCEO): 80V
- Collector Base Voltage (VCBO): 80V
- Max Power Dissipation: 800mW
- Lifecycle Status: IN PRODUCTION (Last Updated: 2 weeks ago)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Max Operating Temperature: 200°C
- Collector Emitter Breakdown Voltage: 80V
- Polarity: PNP
- Power Dissipation: 800mW
- Package / Case: TO-39
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