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BC636-10-AP123
  • Manufacturer No:
    BC636-10-AP
  • Manufacturer:
    Micro Commercial Co
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    122515
  • Description:
    TO-226-3TO-92-3 (TO-226AA) Formed Leads Through Hole PNP SINGLE Bipolar (BJT) Transistor 63 @ 150mA 2V 1A 830MW 100MHz
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BC636-10-AP
  • Manufacturer No:
    BC636-10-AP
  • Manufacturer:
    Micro Commercial Co
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    BC636-10-AP
  • SKU:
    122515
  • Description:
    TO-226-3TO-92-3 (TO-226AA) Formed Leads Through Hole PNP SINGLE Bipolar (BJT) Transistor 63 @ 150mA 2V 1A 830MW 100MHz

BC636-10-AP Details

TO-226-3TO-92-3 (TO-226AA) Formed Leads Through Hole PNP SINGLE Bipolar (BJT) Transistor 63 @ 150mA 2V 1A 830MW 100MHz

BC636-10-AP Specification Parameters

  • Surface Mount: NO
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • Pbfree Code: yes
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Current - Collector (Ic) (Max): 1A
  • Configuration: Single
  • Part Status: Last Time Buy
  • Frequency - Transition: 100MHz
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • JESD-30 Code: O-PBCY-T3
  • Power - Max: 830mW
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Pin Count: 3
  • Terminal Finish: Matte Tin (Sn)
  • Transistor Element Material: SILICON
  • Terminal Position: BOTTOM
  • Transition Frequency: 100MHz
  • Operating Temperature: -65°C~150°C TJ
  • Polarity/Channel Type: PNP
  • Current - Collector Cutoff (Max): 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA 2V

Excellent

Based on reviews

Excellent

Based on reviews

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