DN3135K1-GMicrochip
    Add to like
    Add to project list
    DN3135K1-G123
    • Manufacturer No：
      DN3135K1-G
    • Manufacturer：
      Microchip
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      567539
    • Description：
      Trans MOSFET N-CH Si 350V 0.072A 3-Pin SOT-23 T/R
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price
    • 1 $0.72 $0.72
    • 10 $0.712 $7.12
    • 100 $0.704 $70.4
    • 1000 $0.697 $697

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    DN3135K1-G
    • Manufacturer No：
      DN3135K1-G
    • Manufacturer：
      Microchip
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      DN3135K1-G
    • SKU：
      567539
    • Description：
      Trans MOSFET N-CH Si 350V 0.072A 3-Pin SOT-23 T/R

    User Guide

    User Guide

    DN3135K1-G Details

    Trans MOSFET N-CH Si 350V 0.072A 3-Pin SOT-23 T/R

    DN3135K1-G Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2010
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 350V
    • FET Type: N-Channel
    • Width: 1.3mm
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Subcategory: FET General Purpose Power
    • Height: 950μm
    • Turn-Off Delay Time: 15 ns
    • Drive Voltage (Max Rds On,Min Rds On): 0V
    • Continuous Drain Current (ID): 72mA
    • Additional Feature: LOW THRESHOLD
    • Power Dissipation-Max: 360mW Ta
    • Drain Current-Max (Abs) (ID): 0.072A
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Factory Lead Time: 17 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • Length: 2.9mm
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Turn On Delay Time: 10 ns
    • Fall Time (Typ): 15 ns
    • Rise Time: 15 ns
    • Power Dissipation: 360mW
    • Weight: 1.437803g
    • FET Feature: Depletion Mode
    • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
    • Rds On (Max) @ Id, Vgs: 35 Ω @ 150mA, 0V
    Search for similar products

    DN3135K1-G Similar Products

    The four parts on the right have similar specifications to Microchip & DN3135K1-G

    Microchip — Manufacturer Introduction

    Microchip
    Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via