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- Manufacturer No：M29W320DB70ZE6E
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：M29W320DB70ZE6E
- SKU：3921222
- Description：3A991.B.1.A Surface Mount M29W320 Tray ic memory 70ns 6mm 10mA 32Mb
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User Guide
M29W320DB70ZE6E Details
3A991.B.1.A Surface Mount M29W320 Tray ic memory 70ns 6mm 10mA 32Mb
M29W320DB70ZE6E Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Radiation Hardening: No
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Alternate Memory Width: 8
- Power Supplies: 3.3V
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2010
- Memory Format: FLASH
- Number of Pins: 48
- Terminal Position: BOTTOM
- Voltage: 2.7V
- Memory Interface: Parallel
- JESD-609 Code: e1
- Nominal Supply Current: 10mA
- Length: 8mm
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Write Cycle Time - Word, Page: 70ns
- Standby Current-Max: 0.0001A
- Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
- Organization: 2MX16
- Additional Feature: BOTTOM BOOT BLOCK
- Base Part Number: M29W320
- Mounting Type: Surface Mount
- Pbfree Code: yes
- Surface Mount: YES
- Data Polling: YES
- Ready/Busy: YES
- Part Status: Obsolete
- Supply Voltage: 3.3V
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Temperature: -40°C~85°C TA
- Number of Terminations: 48
- Pin Count: 48
- Boot Block: BOTTOM
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Width: 6mm
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Technology: FLASH - NOR
- Access Time (Max): 70 ns
- ECCN Code: 3A991.B.1.A
- Package / Case: 48-TFBGA
- Sector Size: 16K8K32K64K
- Density: 32 Mb
- Memory Size: 32Mb 4M x 8 2M x 16
- Number of Sectors/Size: 12163
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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