M29W400FB55N3EMicron Technology Inc.
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    M29W400FB55N3E123
    • Manufacturer No：
      M29W400FB55N3E
    • Manufacturer：
      Micron Technology Inc.
    • Category：
      Memory
    • Datasheet：
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    • SKU：
      3921779
    • Description：
      EAR99 Surface Mount M29W400 Tray ic memory 55ns 12mm 10mA 4Mb
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    M29W400FB55N3E
    • Manufacturer No：
      M29W400FB55N3E
    • Manufacturer：
      Micron Technology Inc.
    • Category：
      Memory
    • Datasheet：
      M29W400FB55N3E
    • SKU：
      3921779
    • Description：
      EAR99 Surface Mount M29W400 Tray ic memory 55ns 12mm 10mA 4Mb

    User Guide

    User Guide

    M29W400FB55N3E Details

    EAR99 Surface Mount M29W400 Tray ic memory 55ns 12mm 10mA 4Mb

    M29W400FB55N3E Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Functions: 1
    • Pbfree Code: yes
    • Surface Mount: YES
    • Data Polling: YES
    • Ready/Busy: YES
    • JESD-609 Code: e3
    • Alternate Memory Width: 8
    • Supply Voltage: 3.3V
    • Packaging: Tray
    • Peak Reflow Temperature (Cel): 260
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Published: 2010
    • Memory Format: FLASH
    • Number of Pins: 48
    • Boot Block: BOTTOM
    • Memory Interface: Parallel
    • Nominal Supply Current: 10mA
    • Memory Type: Non-Volatile
    • Voltage - Supply: 2.7V~3.6V
    • Sync/Async: Asynchronous
    • HTS Code: 8542.32.00.51
    • Write Cycle Time - Word, Page: 55ns
    • Standby Current-Max: 0.0001A
    • Package / Case: 48-TFSOP (0.724, 18.40mm Width)
    • Sector Size: 16K8K32K64K
    • Number of Sectors/Size: 1217
    • Base Part Number: M29W400
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Command User Interface: YES
    • Toggle Bit: YES
    • Common Flash Interface: YES
    • Part Status: Obsolete
    • Terminal Position: DUAL
    • Power Supplies: 3.3V
    • Memory Width: 16
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 30
    • Terminal Pitch: 0.5mm
    • Number of Terminations: 48
    • Pin Count: 48
    • Voltage: 2.7V
    • Height Seated (Max): 1.2mm
    • Operating Temperature: -40°C~125°C TA
    • Width: 12mm
    • Screening Level: AEC-Q100
    • Technology: FLASH - NOR
    • Access Time (Max): 55 ns
    • Length: 18.4mm
    • Density: 4 Mb
    • Organization: 256KX16
    • Additional Feature: BOTTOM BOOT BLOCK
    • Memory Size: 4Mb 512K x 8 256K x 16
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    Micron Technology Inc. — Manufacturer Introduction

    Micron Technology Inc.
    In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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