M29W640GB70NA6EMicron Technology Inc.
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    M29W640GB70NA6E123
    • Manufacturer No：
      M29W640GB70NA6E
    • Manufacturer：
      Micron Technology Inc.
    • Category：
      Memory
    • Datasheet：
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    • SKU：
      3925870
    • Description：
      3A991.B.1.A Surface Mount M29W640 Tray ic memory 70ns 12mm 10mA 64Mb
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    M29W640GB70NA6E
    • Manufacturer No：
      M29W640GB70NA6E
    • Manufacturer：
      Micron Technology Inc.
    • Category：
      Memory
    • Datasheet：
      M29W640GB70NA6E
    • SKU：
      3925870
    • Description：
      3A991.B.1.A Surface Mount M29W640 Tray ic memory 70ns 12mm 10mA 64Mb

    User Guide

    User Guide

    M29W640GB70NA6E Details

    3A991.B.1.A Surface Mount M29W640 Tray ic memory 70ns 12mm 10mA 64Mb

    M29W640GB70NA6E Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Functions: 1
    • Radiation Hardening: No
    • Command User Interface: YES
    • Toggle Bit: YES
    • Common Flash Interface: YES
    • JESD-609 Code: e4
    • Terminal Position: DUAL
    • Memory Width: 16
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2009
    • Terminal Pitch: 0.5mm
    • Number of Terminations: 48
    • Pin Count: 48
    • Voltage: 2.7V
    • Height Seated (Max): 1.2mm
    • Memory Type: Non-Volatile
    • Voltage - Supply: 2.7V~3.6V
    • Technology: FLASH - NOR
    • Power Supplies: 3/3.3V
    • Write Cycle Time - Word, Page: 70ns
    • ECCN Code: 3A991.B.1.A
    • Package / Case: 48-TFSOP (0.724, 18.40mm Width)
    • Density: 64 Mb
    • Memory Size: 64Mb 8M x 8 4M x 16
    • Page Size: 4/8words
    • Base Part Number: M29W640
    • Mounting Type: Surface Mount
    • Pbfree Code: yes
    • Surface Mount: YES
    • Data Polling: YES
    • Ready/Busy: YES
    • Part Status: Obsolete
    • Alternate Memory Width: 8
    • Packaging: Tray
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
    • Supply Voltage: 3V
    • Operating Temperature: -40°C~85°C TA
    • Memory Format: FLASH
    • Number of Pins: 48
    • Boot Block: BOTTOM
    • Memory Interface: Parallel
    • Nominal Supply Current: 10mA
    • Width: 12mm
    • Sync/Async: Asynchronous
    • HTS Code: 8542.32.00.51
    • Access Time (Max): 70 ns
    • Length: 18.4mm
    • Standby Current-Max: 0.0001A
    • Organization: 4MX16
    • Additional Feature: BOTTOM BOOT BLOCK
    • Sector Size: 8K64K
    • Number of Sectors/Size: 8127
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    Micron Technology Inc. — Manufacturer Introduction

    Micron Technology Inc.
    In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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