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- Manufacturer No：MT29F8G08ADADAH4-IT:D
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT29F8G08ADADAH4-IT:D
- SKU：3924936
- Description：3A991.B.1.A Surface Mount MT29F8G08 Tray ic memory 20ns 1mm 35mA 8Gb
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MT29F8G08ADADAH4-IT:D Details
3A991.B.1.A Surface Mount MT29F8G08 Tray ic memory 20ns 1mm 35mA 8Gb
MT29F8G08ADADAH4-IT:D Specification Parameters
- Part Status: Active
- Data Polling: NO
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Ready/Busy: YES
- Memory Width: 8
- Operating Supply Voltage: 3.3V
- Peak Reflow Temperature (Cel): 260
- Published: 2011
- Time@Peak Reflow Temperature-Max (s): 30
- Height: 1mm
- Factory Lead Time: 5 Weeks
- Terminal Position: BOTTOM
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Supply: 2.7V~3.6V
- Nominal Supply Current: 35mA
- Access Time: 20 ns
- Number of Terminations: 63
- Pin Count: 63
- Page Size: 2kB
- Standby Current-Max: 0.0001A
- Sector Size: 128K
- Memory Size: 8Gb 1G x 8
- Density: 8 Gb
- Base Part Number: MT29F8G08
- Toggle Bit: NO
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Pbfree Code: yes
- Command User Interface: YES
- Lead Free: Lead Free
- Supply Voltage: 3.3V
- Packaging: Tray
- Ambient Temperature Range High: 85°C
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Supply Voltage-Max (Vsup): 3.6V
- Supply Voltage-Min (Vsup): 2.7V
- Memory Interface: Parallel
- Memory Type: Non-Volatile
- Word Size: 8b
- Contact Plating: Copper, Silver, Tin
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Number of Pins: 63
- Technology: FLASH - NAND
- ECCN Code: 3A991.B.1.A
- Address Bus Width: 1b
- Package / Case: 63-VFBGA
- Organization: 8GX8
- Number of Sectors/Size: 8K
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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