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- Manufacturer No：MT29F8G08ADBDAH4:D
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT29F8G08ADBDAH4:D
- SKU：3925849
- Description：Asynchronous Obsolete 2008 BOTTOM ic memory 0C~70C TA 1.7V 8Gb 20mA
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MT29F8G08ADBDAH4:D Details
Asynchronous Obsolete 2008 BOTTOM ic memory 0C~70C TA 1.7V 8Gb 20mA
MT29F8G08ADBDAH4:D Specification Parameters
- Toggle Bit: NO
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Ready/Busy: YES
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 1.8V
- Height Seated (Max): 1mm
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Operating Temperature: 0°C~70°C TA
- Word Size: 8b
- Supply Voltage-Min (Vsup): 1.7V
- Access Time: 25 ns
- Number of Pins: 63
- Technology: FLASH - NAND
- Voltage - Supply: 1.7V~1.95V
- Address Bus Width: 1b
- Package / Case: 63-VFBGA
- Organization: 1GX8
- Number of Sectors/Size: 8K
- Data Polling: NO
- Packaging: Bulk
- Mount: Surface Mount
- Pbfree Code: yes
- Command User Interface: YES
- Factory Lead Time: 3 Weeks
- Memory Width: 8
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Published: 2008
- Memory Format: FLASH
- Terminal Pitch: 0.8mm
- Nominal Supply Current: 20mA
- Memory Type: Non-Volatile
- Length: 11mm
- Sync/Async: Asynchronous
- Number of Terminations: 63
- Supply Voltage-Max (Vsup): 1.95V
- Page Size: 2kB
- Standby Current-Max: 0.00005A
- Sector Size: 128K
- Memory Size: 8Gb 1G x 8
- Density: 8 Gb
- Base Part Number: MT29F8G08
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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