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- Manufacturer No：MT46H16M16LFBF-5:H
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT46H16M16LFBF-5:H
- SKU：3923169
- Description：EAR99 Surface Mount MT46H16M16 Tray ic memory 200MHz 5ns 9mm 140mA
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MT46H16M16LFBF-5:H Details
EAR99 Surface Mount MT46H16M16 Tray ic memory 200MHz 5ns 9mm 140mA
MT46H16M16LFBF-5:H Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Radiation Hardening: No
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 1.8V
- Height Seated (Max): 1mm
- Terminal Position: BOTTOM
- Number of Terminations: 60
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 1.7V
- Nominal Supply Current: 140mA
- Access Time: 5ns
- Write Cycle Time - Word, Page: 15ns
- Terminal Finish: TIN SILVER COPPER
- Additional Feature: AUTO/SELF REFRESH
- Address Bus Width: 15b
- Organization: 16MX16
- Technology: SDRAM - Mobile LPDDR
- Interleaved Burst Length: 24816
- Standby Current-Max: 0.0003A
- Base Part Number: MT46H16M16
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Published: 2008
- Part Status: Discontinued
- Number of Pins: 60
- Pin Count: 60
- Memory Interface: Parallel
- Operating Temperature: 0°C~70°C TA
- Length: 9mm
- Clock Frequency: 200MHz
- Data Bus Width: 16b
- I/O Type: COMMON
- Memory Format: DRAM
- Refresh Cycles: 8192
- Supply Voltage-Max (Vsup): 1.95V
- Voltage - Supply: 1.7V~1.95V
- Memory Size: 256Mb 16M x 16
- Density: 256 Mb
- HTS Code: 8542.32.00.24
- Sequential Burst Length: 24816
- Package / Case: 60-VFBGA
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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