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- Manufacturer No：MT46H32M16LFBF-5 AIT:C
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT46H32M16LFBF-5 AIT:C
- SKU：3920322
- Description：Active 3-STATE 2014 BOTTOM DRAM Memory -40C~85C TA 1.7V 536870912bit 0.00001A
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MT46H32M16LFBF-5 AIT:C Details
Active 3-STATE 2014 BOTTOM DRAM Memory -40C~85C TA 1.7V 536870912bit 0.00001A
MT46H32M16LFBF-5 AIT:C Specification Parameters
- Part Status: Active
- Packaging: Bulk
- Number of Functions: 1
- ECCN Code: EAR99
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2014
- Power Supplies: 1.8V
- Height Seated (Max): 1mm
- Number of Terminations: 60
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Width: 8mm
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 1.7V
- I/O Type: COMMON
- Memory Format: DRAM
- Refresh Cycles: 8192
- Supply Voltage-Max (Vsup): 1.95V
- Standby Current-Max: 0.00001A
- Memory Density: 536870912 bit
- Organization: 32MX16
- HTS Code: 8542.32.00.28
- Sequential Burst Length: 24816
- Package / Case: 60-VFBGA
- Base Part Number: MT46H32M16
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Ports: 1
- Surface Mount: YES
- Memory Width: 16
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 30
- Supply Voltage: 1.8V
- Operating Temperature: -40°C~85°C TA
- Terminal Position: BOTTOM
- Pin Count: 60
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Length: 9mm
- Clock Frequency: 200MHz
- Operating Mode: SYNCHRONOUS
- Access Time: 5ns
- Write Cycle Time - Word, Page: 15ns
- Terminal Finish: TIN SILVER COPPER
- Additional Feature: AUTO/SELF REFRESH
- Voltage - Supply: 1.7V~1.95V
- Memory Size: 512Mb 32M x 16
- Technology: SDRAM - Mobile LPDDR
- Interleaved Burst Length: 24816
- JESD-30 Code: R-PBGA-B60
- Supply Current-Max: 0.115mA
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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