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- Manufacturer No：MT46H64M32L2JG-6 IT:A TR
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT46H64M32L2JG-6 IT:A TR
- SKU：3920214
- Description：Discontinued 2004 BOTTOM Volatile ic memory -40C~85C TA 1.7V 2147483648bit 12mm
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MT46H64M32L2JG-6 IT:A TR Details
Discontinued 2004 BOTTOM Volatile ic memory -40C~85C TA 1.7V 2147483648bit 12mm
MT46H64M32L2JG-6 IT:A TR Specification Parameters
- RoHS Status: ROHS3 Compliant
- Packaging: Tape & Reel (TR)
- Number of Ports: 1
- Surface Mount: YES
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Operating Temperature: -40°C~85°C TA
- Part Status: Discontinued
- Published: 2004
- JESD-609 Code: e1
- Length: 12mm
- Height Seated (Max): 0.9mm
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Supply Voltage-Max (Vsup): 1.95V
- Number of Terminations: 168
- Memory Density: 2147483648 bit
- HTS Code: 8542.32.00.36
- JESD-30 Code: S-PBGA-B168
- Organization: 64MX32
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Memory Width: 32
- Terminal Pitch: 0.5mm
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Memory Type: Volatile
- Width: 12mm
- Supply Voltage-Min (Vsup): 1.7V
- Access Time: 5ns
- Clock Frequency: 166MHz
- Terminal Finish: TIN SILVER COPPER
- Additional Feature: AUTO/SELF REFRESH
- Voltage - Supply: 1.7V~1.95V
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 2Gb 64M x 32
- Package / Case: 168-VFBGA
- Base Part Number: MT46H64M32
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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