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- Manufacturer No：MT46V64M4P-5B:K
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT46V64M4P-5B:K
- SKU：3920381
- Description：EAR99 Surface Mount MT46V64M4 Tray ic memory 200MHz 700ps 22.22mm 290mA
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MT46V64M4P-5B:K Details
EAR99 Surface Mount MT46V64M4 Tray ic memory 200MHz 700ps 22.22mm 290mA
MT46V64M4P-5B:K Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Memory Width: 4
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2009
- Supply Voltage-Max (Vsup): 2.7V
- Height Seated (Max): 1.2mm
- Operating Temperature: 0°C~70°C TA
- Number of Pins: 66
- Pin Count: 66
- Clock Frequency: 200MHz
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Operating Supply Voltage: 2.6V
- Additional Feature: AUTO/SELF REFRESH
- Nominal Supply Current: 290mA
- Sequential Burst Length: 248
- Address Bus Width: 15b
- Density: 256 Mb
- Package / Case: 66-TSSOP (0.400, 10.16mm Width)
- Voltage - Supply: 2.5V~2.7V
- Data Bus Width: 4b
- Base Part Number: MT46V64M4
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Packaging: Tray
- Supply Voltage-Min (Vsup): 2.5V
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Pitch: 0.65mm
- Memory Interface: Parallel
- Terminal Finish: MATTE TIN
- Output Characteristics: 3-STATE
- Number of Terminations: 66
- Memory Type: Volatile
- I/O Type: COMMON
- Max Frequency: 400MHz
- Supply Voltage: 2.6V
- Refresh Cycles: 8192
- Standby Current-Max: 0.004A
- Length: 22.22mm
- Interleaved Burst Length: 248
- Technology: SDRAM - DDR
- Access Time: 700ps
- HTS Code: 8542.32.00.24
- Organization: 64MX4
- Memory Size: 256Mb 64M x 4
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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