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- Manufacturer No：MT47H128M4CF-25E:G
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT47H128M4CF-25E:G
- SKU：3920514
- Description：EAR99 Surface Mount MT47H128M4 Tray ic memory 400MHz 400ps 10mm 125mA
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MT47H128M4CF-25E:G Details
EAR99 Surface Mount MT47H128M4 Tray ic memory 400MHz 400ps 10mm 125mA
MT47H128M4CF-25E:G Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Memory Width: 4
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Supply Voltage: 1.8V
- Interleaved Burst Length: 48
- Length: 10mm
- Number of Pins: 60
- Pin Count: 60
- Memory Interface: Parallel
- JESD-609 Code: e1
- Memory Type: Volatile
- Address Bus Width: 16b
- Supply Voltage-Max (Vsup): 1.9V
- Clock Frequency: 400MHz
- Voltage - Supply: 1.7V~1.9V
- Refresh Cycles: 8192
- Max Frequency: 800MHz
- Operating Temperature: 0°C~85°C TC
- Package / Case: 60-TFBGA
- HTS Code: 8542.32.00.28
- Standby Current-Max: 0.007A
- Organization: 128MX4
- Base Part Number: MT47H128M4
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Packaging: Tray
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2010
- Operating Supply Voltage: 1.8V
- Sequential Burst Length: 48
- Terminal Position: BOTTOM
- Number of Terminations: 60
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Supply Voltage-Min (Vsup): 1.7V
- I/O Type: COMMON
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Nominal Supply Current: 125mA
- Terminal Finish: TIN SILVER COPPER
- Additional Feature: AUTO/SELF REFRESH
- Technology: SDRAM - DDR2
- Density: 512 Mb
- Access Time: 400ps
- Data Bus Width: 4b
- Memory Size: 512Mb 128M x 4
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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