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- Manufacturer No：MT47H256M8EB-25E:C
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT47H256M8EB-25E:C
- SKU：3920268
- Description：EAR99 Surface Mount MT47H256M8 Tray ic memory 400MHz 400ps 11.5mm 130mA
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MT47H256M8EB-25E:C Details
EAR99 Surface Mount MT47H256M8 Tray ic memory 400MHz 400ps 11.5mm 130mA
MT47H256M8EB-25E:C Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Memory Width: 8
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 1.8V
- Sequential Burst Length: 48
- Number of Pins: 60
- Pin Count: 60
- Memory Interface: Parallel
- JESD-609 Code: e1
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 1.7V
- Nominal Supply Current: 130mA
- Supply Voltage-Max (Vsup): 1.9V
- Clock Frequency: 400MHz
- Voltage - Supply: 1.7V~1.9V
- Terminal Finish: Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Max Frequency: 800MHz
- Additional Feature: AUTO/SELF REFRESH
- Technology: SDRAM - DDR2
- Memory Size: 2Gb 256M x 8
- HTS Code: 8542.32.00.36
- Organization: 256MX8
- Base Part Number: MT47H256M8
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tray
- Published: 2011
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Interleaved Burst Length: 48
- Terminal Position: BOTTOM
- Number of Terminations: 60
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Data Bus Width: 8b
- Contact Plating: Copper, Silver, Tin
- I/O Type: COMMON
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Length: 11.5mm
- Refresh Cycles: 8192
- Address Bus Width: 18b
- Operating Temperature: 0°C~85°C TC
- Package / Case: 60-TFBGA
- Access Time: 400ps
- Standby Current-Max: 0.012A
- Density: 2 Gb
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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