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MT47H256M8EB-25E XIT:C123
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MT47H256M8EB-25E XIT:C
  • Manufacturer No:
    MT47H256M8EB-25E XIT:C
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    MT47H256M8EB-25E XIT:C
  • SKU:
    3920785
  • Description:
    IC DRAM 2G PARALLEL 60FBGA

MT47H256M8EB-25E XIT:C Details

IC DRAM 2G PARALLEL 60FBGA

MT47H256M8EB-25E XIT:C Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Packaging: Tray
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Part Status: Last Time Buy
  • Memory Type: Volatile
  • Clock Frequency: 400MHz
  • Voltage - Supply: 1.7V~1.9V
  • Operating Temperature: -40°C~95°C TC
  • Memory Size: 2Gb 256M x 8
  • Base Part Number: MT47H256M8
  • Mounting Type: Surface Mount
  • Factory Lead Time: 4 Weeks
  • Published: 2014
  • Memory Interface: Parallel
  • Memory Format: DRAM
  • Write Cycle Time - Word, Page: 15ns
  • Technology: SDRAM - DDR2
  • Package / Case: 60-TFBGA
  • Access Time: 400ps

Micron Technology Inc. — Manufacturer Introduction

Micron Technology Inc.
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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