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- Manufacturer No：MT47H64M16HR-25E L:H
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT47H64M16HR-25E L:H
- SKU：3923102
- Description：EAR99 Surface Mount MT47H64M16 Tray ic memory 400MHz 400ps 8mm 0.007A
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MT47H64M16HR-25E L:H Details
EAR99 Surface Mount MT47H64M16 Tray ic memory 400MHz 400ps 8mm 0.007A
MT47H64M16HR-25E L:H Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Surface Mount: YES
- Packaging: Tray
- Memory Width: 16
- Published: 2011
- Time@Peak Reflow Temperature-Max (s): 30
- Power Supplies: 1.8V
- Sequential Burst Length: 48
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 1.7V
- Pin Count: 84
- I/O Type: COMMON
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Refresh Cycles: 8192
- Additional Feature: AUTO/SELF REFRESH
- Operating Temperature: 0°C~85°C TC
- Memory Size: 1Gb 64M x 16
- Access Time: 400ps
- HTS Code: 8542.32.00.32
- Standby Current-Max: 0.007A
- Base Part Number: MT47H64M16
- Mounting Type: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Part Status: Obsolete
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Interleaved Burst Length: 48
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- JESD-609 Code: e1
- Width: 8mm
- Length: 12.5mm
- Number of Terminations: 84
- Operating Mode: SYNCHRONOUS
- Supply Voltage-Max (Vsup): 1.9V
- Clock Frequency: 400MHz
- Voltage - Supply: 1.7V~1.9V
- Terminal Finish: TIN SILVER COPPER
- Memory Density: 1073741824 bit
- Technology: SDRAM - DDR2
- Organization: 64MX16
- Package / Case: 84-TFBGA
- Supply Current-Max: 0.26mA
- JESD-30 Code: R-PBGA-B84
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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