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- Manufacturer No：MT48LC4M16A2P-75 IT:G
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT48LC4M16A2P-75 IT:G
- SKU：3923411
- Description：EAR99 Surface Mount MT48LC4M16A2 Tray ic memory 133MHz 5.4ns 10.16mm 0.002A
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MT48LC4M16A2P-75 IT:G Details
EAR99 Surface Mount MT48LC4M16A2 Tray ic memory 133MHz 5.4ns 10.16mm 0.002A
MT48LC4M16A2P-75 IT:G Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Surface Mount: YES
- Part Status: Obsolete
- Supply Voltage: 3.3V
- Packaging: Tray
- Memory Width: 16
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2008
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Voltage - Supply: 3V~3.6V
- Number of Terminations: 54
- Operating Mode: SYNCHRONOUS
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 15ns
- Additional Feature: AUTO/SELF REFRESH
- Access Time: 5.4ns
- Standby Current-Max: 0.002A
- Sequential Burst Length: 1248FP
- Package / Case: 54-TSOP (0.400, 10.16mm Width)
- HTS Code: 8542.32.00.02
- JESD-30 Code: R-PDSO-G54
- Base Part Number: MT48LC4M16A2
- Mounting Type: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Power Supplies: 3.3V
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage-Min (Vsup): 3V
- Operating Temperature: -40°C~85°C TA
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Memory Type: Volatile
- Width: 10.16mm
- Pin Count: 54
- I/O Type: COMMON
- Memory Format: DRAM
- Refresh Cycles: 4096
- Technology: SDRAM
- Length: 22.22mm
- Interleaved Burst Length: 1248
- Memory Density: 67108864 bit
- Organization: 4MX16
- Memory Size: 64Mb 4M x 16
- Supply Current-Max: 0.21mA
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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