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- Manufacturer No：MT48LC4M32B2B5-6A IT:L
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT48LC4M32B2B5-6A IT:L
- SKU：3930982
- Description：EAR99 Surface Mount MT48LC4M32B2 Bulk ic memory 167MHz 5.4ns 8mm 0.0025A
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MT48LC4M32B2B5-6A IT:L Details
EAR99 Surface Mount MT48LC4M32B2 Bulk ic memory 167MHz 5.4ns 8mm 0.0025A
MT48LC4M32B2B5-6A IT:L Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Ports: 1
- Surface Mount: YES
- Supply Voltage: 3.3V
- Qualification Status: Not Qualified
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2014
- Operating Temperature: -40°C~85°C TA
- Supply Voltage-Max (Vsup): 3.6V
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Memory Type: Volatile
- Number of Terminations: 90
- Length: 13mm
- I/O Type: COMMON
- Refresh Cycles: 4096
- Additional Feature: AUTO/SELF REFRESH
- Clock Frequency: 167MHz
- Interleaved Burst Length: 1248
- Sequential Burst Length: 1248FP
- Supply Current-Max: 0.18mA
- Package / Case: 90-VFBGA
- JESD-30 Code: R-PBGA-B90
- Base Part Number: MT48LC4M32B2
- Packaging: Bulk
- Number of Functions: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Power Supplies: 3.3V
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage-Min (Vsup): 3V
- Memory Width: 32
- Height Seated (Max): 1mm
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Width: 8mm
- Voltage - Supply: 3V~3.6V
- Pin Count: 90
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 12ns
- Technology: SDRAM
- Access Time: 5.4ns
- Memory Density: 134217728 bit
- HTS Code: 8542.32.00.02
- Memory Size: 128Mb 4M x 32
- Standby Current-Max: 0.0025A
- Organization: 4MX32
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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