Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：NAND01GW3B2CN6E
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：NAND01GW3B2CN6E
- SKU：3933286
- Description：3A991.B.1.A Surface Mount NAND01G-A Tray ic memory 25000ns 18.4mm 30mA 1Gb
User Guide
User Guide
NAND01GW3B2CN6E Details
3A991.B.1.A Surface Mount NAND01G-A Tray ic memory 25000ns 18.4mm 30mA 1Gb
NAND01GW3B2CN6E Specification Parameters
- Toggle Bit: NO
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Radiation Hardening: No
- Ready/Busy: YES
- Part Status: Obsolete
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Programming Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Number of Pins: 48
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Nominal Supply Current: 30mA
- Word Size: 8b
- Sync/Async: Asynchronous
- Power Supplies: 3/3.3V
- Length: 18.4mm
- Page Size: 2kB
- Package / Case: 48-TFSOP (0.724, 18.40mm Width)
- Write Cycle Time-Max (tWC): 25 ms
- Memory Size: 1Gb 128M x 8
- Organization: 128MX8
- Address Bus Width: 28b
- Base Part Number: NAND01G-A
- Data Polling: NO
- Mounting Type: Surface Mount
- Number of Functions: 1
- Command User Interface: YES
- JESD-609 Code: e3
- Memory Width: 8
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Published: 2008
- Terminal Pitch: 0.5mm
- Number of Terminations: 48
- Pin Count: 48
- Supply Voltage-Min (Vsup): 2.7V
- Height Seated (Max): 1.2mm
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- HTS Code: 8542.32.00.51
- Write Cycle Time - Word, Page: 25ns
- Technology: FLASH - NAND
- ECCN Code: 3A991.B.1.A
- Number of Sectors/Size: 1K
- Standby Current-Max: 0.00005A
- Sector Size: 128K
- Density: 1 Gb
- Access Time (Max): 25000 ns
Search for similar products
NAND01GW3B2CN6E Similar Products
The four parts on the right have similar specifications to Micron Technology Inc. & NAND01GW3B2CN6E
Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
