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NAND04GR3B2DN6E123
  • Manufacturer No:
    NAND04GR3B2DN6E
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
    Get the PDF file
  • SKU:
    3930869
  • Description:
    e3 Surface Mount NAND04G Tray ic memory 25000ns 18.4mm 20mA 4Gb
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NAND04GR3B2DN6E
  • Manufacturer No:
    NAND04GR3B2DN6E
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    NAND04GR3B2DN6E
  • SKU:
    3930869
  • Description:
    e3 Surface Mount NAND04G Tray ic memory 25000ns 18.4mm 20mA 4Gb

NAND04GR3B2DN6E Details

e3 Surface Mount NAND04G Tray ic memory 25000ns 18.4mm 20mA 4Gb

NAND04GR3B2DN6E Specification Parameters

  • Toggle Bit: NO
  • RoHS Status: ROHS3 Compliant
  • Mount: Surface Mount
  • Pbfree Code: yes
  • Ready/Busy: YES
  • Memory Width: 8
  • Packaging: Tray
  • Peak Reflow Temperature (Cel): 260
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Published: 2010
  • Operating Supply Voltage: 1.8V
  • Terminal Pitch: 0.5mm
  • Number of Terminations: 48
  • Pin Count: 48
  • Memory Interface: Parallel
  • Height Seated (Max): 1.2mm
  • Supply Voltage-Min (Vsup): 1.7V
  • Sync/Async: Asynchronous
  • Write Cycle Time - Word, Page: 25ns
  • Technology: FLASH - NAND
  • Package / Case: 48-TFSOP (0.724, 18.40mm Width)
  • Address Bus Width: 1b
  • Number of Sectors/Size: 4K
  • Organization: 512MX8
  • Page Size: 2Kwords
  • Base Part Number: NAND04G
  • Data Polling: NO
  • Mounting Type: Surface Mount
  • Number of Functions: 1
  • Command User Interface: YES
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Qualification Status: Not Qualified
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 30
  • Supply Voltage: 1.8V
  • Operating Temperature: -40°C~85°C TA
  • Memory Format: FLASH
  • Number of Pins: 48
  • Part Status: Discontinued
  • Nominal Supply Current: 20mA
  • Memory Type: Non-Volatile
  • Word Size: 16b
  • Supply Voltage-Max (Vsup): 1.95V
  • Length: 18.4mm
  • Voltage - Supply: 1.7V~1.95V
  • Standby Current-Max: 0.00005A
  • Sector Size: 128K
  • Memory Size: 4Gb 512M x 8
  • Density: 4 Gb
  • Access Time (Max): 25000 ns

Micron Technology Inc. — Manufacturer Introduction

Micron Technology Inc.
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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