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NAND256W3A2BNXE123
  • Manufacturer No:
    NAND256W3A2BNXE
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
    Get the PDF file
  • SKU:
    3935261
  • Description:
    Asynchronous Obsolete 2012 DUAL FLASH Memory -40C~85C TA 3V 256Mb 20mA
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NAND256W3A2BNXE
  • Manufacturer No:
    NAND256W3A2BNXE
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    NAND256W3A2BNXE
  • SKU:
    3935261
  • Description:
    Asynchronous Obsolete 2012 DUAL FLASH Memory -40C~85C TA 3V 256Mb 20mA

NAND256W3A2BNXE Details

Asynchronous Obsolete 2012 DUAL FLASH Memory -40C~85C TA 3V 256Mb 20mA

NAND256W3A2BNXE Specification Parameters

  • Toggle Bit: NO
  • RoHS Status: ROHS3 Compliant
  • Mount: Surface Mount
  • Pbfree Code: yes
  • Command User Interface: YES
  • JESD-609 Code: e3
  • Memory Width: 8
  • Voltage - Rated DC: 3.3V
  • Packaging: Tray
  • Peak Reflow Temperature (Cel): 260
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Supply Voltage: 3V
  • Operating Temperature: -40°C~85°C TA
  • Memory Format: FLASH
  • Number of Pins: 48
  • Nominal Supply Current: 20mA
  • Terminal Finish: MATTE TIN
  • Word Size: 8b
  • Sync/Async: Asynchronous
  • Write Cycle Time - Word, Page: 50ns
  • Technology: FLASH - NAND
  • Package / Case: 48-TFSOP (0.724, 18.40mm Width)
  • Memory Size: 256Mb 32M x 8
  • Organization: 32MX8
  • Address Bus Width: 25b
  • Base Part Number: NAND256
  • Data Polling: NO
  • Mounting Type: Surface Mount
  • Number of Functions: 1
  • Radiation Hardening: No
  • Ready/Busy: YES
  • Part Status: Obsolete
  • Terminal Position: DUAL
  • Voltage: 3.3V
  • Published: 2012
  • Factory Lead Time: 4 Weeks
  • Time@Peak Reflow Temperature-Max (s): 30
  • Operating Supply Voltage: 3V
  • Terminal Pitch: 0.5mm
  • Number of Terminations: 48
  • Memory Interface: Parallel
  • Height Seated (Max): 1.2mm
  • Memory Type: Non-Volatile
  • Voltage - Supply: 2.7V~3.6V
  • Access Time (Max): 45 ns
  • Length: 18.4mm
  • Number of Sectors/Size: 2K
  • Standby Current-Max: 0.00005A
  • Density: 256 Mb
  • Sector Size: 16K
  • Page Size: 528B

Micron Technology Inc. — Manufacturer Introduction

Micron Technology Inc.
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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