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- Manufacturer No：2N2219A
- Manufacturer：NTE Electronics, Inc
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：2N2219A
- SKU：5536110
- Description：Bipolar (BJT) Transistor NPN 40 V 800 mA - 800 mW Through Hole TO-39
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User Guide
2N2219A Details
Bipolar (BJT) Transistor NPN 40 V 800 mA - 800 mW Through Hole TO-39
2N2219A Specification Parameters
- Part Status: Active
- Operating Temperature: -
- Current - Collector Cutoff (Max): -
- Package: Bag
- Mfr: NTE Electronics, Inc
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Power - Max: 800 mW
- Current - Collector (Ic) (Max): 800 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Series: -
- Frequency - Transition: -
- Mounting Type: Through Hole
- Transistor Type: NPN
- Category: Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Supplier Device Package: TO-39
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