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- Manufacturer No：2N3583
- Manufacturer：NTE Electronics, Inc
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：2N3583
- SKU：5537875
- Description：Bipolar (BJT) Transistor NPN 175 V 10 mA - 35 W Through Hole TO-66 (TO-213AA)
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User Guide
2N3583 Details
Bipolar (BJT) Transistor NPN 175 V 10 mA - 35 W Through Hole TO-66 (TO-213AA)
2N3583 Specification Parameters
- Part Status: Active
- Frequency - Transition: -
- Package: Bag
- Transistor Type: NPN
- Category: Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max): 10 mA
- Package / Case: TO-213AA, TO-66-2
- Power - Max: 35 W
- Series: -
- Mounting Type: Through Hole
- Current - Collector Cutoff (Max): 10mA
- Mfr: NTE Electronics, Inc
- Operating Temperature: -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Supplier Device Package: TO-66 (TO-213AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
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