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- Manufacturer No：MPS4356
- Manufacturer：NTE Electronics, Inc
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：MPS4356
- SKU：5551398
- Description：Bipolar (BJT) Transistor PNP 80 V 800 mA - 625 mW Through Hole TO-92
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MPS4356 Details
Bipolar (BJT) Transistor PNP 80 V 800 mA - 625 mW Through Hole TO-92
MPS4356 Specification Parameters
- Part Status: Active
- Frequency - Transition: -
- Package: Bag
- Transistor Type: PNP
- Category: Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Power - Max: 625 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
- Series: -
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mfr: NTE Electronics, Inc
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- Current - Collector (Ic) (Max): 800 mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
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