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- Manufacturer No：TIP147
- Manufacturer：NTE Electronics, Inc
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：TIP147
- SKU：5556210
- Description：Bipolar (BJT) Transistor PNP 100 V 10 A - 125 W Through Hole TO-218
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TIP147 Details
Bipolar (BJT) Transistor PNP 100 V 10 A - 125 W Through Hole TO-218
TIP147 Specification Parameters
- Part Status: Active
- Frequency - Transition: -
- Vce Saturation (Max) @ Ib, Ic: -
- Package: Bag
- Operating Temperature: -65°C ~ 150°C (TJ)
- Category: Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max): 10 A
- Supplier Device Package: TO-218
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Series: -
- Current - Collector Cutoff (Max): -
- Mounting Type: Through Hole
- Transistor Type: PNP
- Mfr: NTE Electronics, Inc
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Package / Case: TO-218-3
- Power - Max: 125 W
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