BA891,115NXP USA Inc.
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    BA891,115123
    • Manufacturer No：
      BA891,115
    • Manufacturer：
      NXP USA Inc.
    • Category：
      Diodes - RF
    • Datasheet：
    • SKU：
      6424467
    • Description：
      RF Diode Standard - Single 35V 100 mA 715 mW SOD-523
    • Quantity：
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    BA891,115
    • Manufacturer No：
      BA891,115
    • Manufacturer：
      NXP USA Inc.
    • Category：
      Diodes - RF
    • Datasheet：
      BA891,115
    • SKU：
      6424467
    • Description：
      RF Diode Standard - Single 35V 100 mA 715 mW SOD-523

    User Guide

    User Guide

    BA891,115 Details

    RF Diode Standard - Single 35V 100 mA 715 mW SOD-523

    BA891,115 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Pin Count: 2
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Tin (Sn)
    • Output Current-Max: 0.1A
    • Current - Max: 100mA
    • Voltage - Peak Reverse (Max): 35V
    • Operating Temperature: -65°C~150°C TJ
    • JESD-30 Code: R-PDSO-F2
    • Package / Case: SC-79, SOD-523
    • Diode Type: Standard - Single
    • Resistance @ If, F: 500mOhm @ 10mA 100MHz
    • Capacitance @ Vr, F: 0.9pF @ 3V 1MHz
    • Base Part Number: BA891
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Packaging: Tape & Reel (TR)
    • Surface Mount: YES
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Qualification Status: Not Qualified
    • Factory Lead Time: 13 Weeks
    • Diode Element Material: SILICON
    • Published: 2001
    • Forward Voltage-Max: 1V
    • Terminal Form: FLAT
    • Subcategory: Rectifier Diodes
    • HTS Code: 8541.10.00.70
    • Frequency Band: VERY HIGH FREQUENCY
    • Power Dissipation-Max: 715mW
    • Technology: PLANAR DOPED BARRIER
    • Diode Capacitance-Max: 1.05pF
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