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- Manufacturer No：PDTC144WE,115
- Manufacturer：NXP USA Inc.
- Category：Transistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet：PDTC144WE,115
- SKU：3087395
- Description：Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount SC-75
User Guide
User Guide
PDTC144WE,115 Details
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount SC-75
PDTC144WE,115 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Part Status: Obsolete
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- Terminal Finish: Tin (Sn)
- Current - Collector (Ic) (Max): 100mA
- Current - Collector Cutoff (Max): 1μA
- Polarity/Channel Type: NPN
- Power Dissipation-Max (Abs): 0.15W
- Subcategory: BIP General Purpose Small Signal
- Resistor - Base (R1): 47 k Ω
- Package / Case: SC-75, SOT-416
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500μA, 10mA
- Additional Feature: BUILT-IN BIAS RESISTOR RATIO IS 0.47
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Pin Count: 3
- Voltage - Collector Emitter Breakdown (Max): 50V
- Peak Reflow Temperature (Cel): 260
- Operating Temperature (Max): 150°C
- Transistor Element Material: SILICON
- Published: 2003
- Transistor Application: SWITCHING
- Power - Max: 150mW
- JESD-30 Code: R-PDSO-G3
- Transistor Type: NPN - Pre-Biased
- Configuration: SINGLE WITH BUILT-IN RESISTOR
- Resistor - Emitter Base (R2): 22 k Ω
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA 5V
- Base Part Number: PDTC144
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